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RQK0603CGDQA
Silicon N Channel MOS FET Power Switching
REJ03G1277-0400 Rev.4.00 Jun 15, 2006
Features
* Low on-resistance RDS(on) = 212 m typ (VGS = 10 V, ID = 1 A) * Low drive current * High speed switching * 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 D 3 1 2 2 G 1. Source 2. Gate 3. Drain
S 1
Note:
Marking is "CG".
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Note1 Drain peak current ID(Pulse) Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings 60 20 2 5 2 0.8 150 -55 to +150 Unit V V A A A W C C
Rev.4.00 Jun 15, 2006 page 1 of 6
RQK0603CGDQA
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 60 20 -- -- 1.0 -- -- 1.6 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 212 248 2.7 130 24 9 7.3 35 44 6.5 2.8 0.4 0.4 0.9 Max -- -- 10 1 2.0 265 348 -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1 A, VGS = 10 VNote3 ID = 1 A, VGS = 4.5 VNote3 ID = 1 A, VDS = 10 VNote3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 0.75 A, VGS = 10 V, RL = 13 , Rg = 4.7
VDD = 10 V, VGS = 10 V, ID = 2 A IF = 1.5 A, VGS = 0 Note3
Rev.4.00 Jun 15, 2006 page 2 of 6
RQK0603CGDQA
Main Characteristics
Maximum Channel Power Dissipation Curve
1.2 100 Operation in this area is limited by RDS(on)
10
1
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
1.0 0.8 0.6 0.4 0.2 0
10
0
1
D C
s
s m
O
PW =
pe ra tio
10 m s
0.1
n
0
25
50
75
100
125
150
0.01 0.01
Tc = 25C
0.1
1
10
100
Ambient Temperature Ta (C)
*When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
5
7,9,10 V
4V 5V 3.8 V 3.6 V 3.4 V
Typical Transfer Characteristics (1)
5 VDS = 10 V Pulse Test -25C 25C 3 Tc = 75C 2
Drain Current ID (A)
3
3.2 V 3.0 V
2
2.8 V 2.6 V Pulse Test Tc = 25C VGS = 0 V
Drain Current ID (A)
4
4
1
1
0
0
2
4
6
8
10
0 0 1 2 3 4 5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage VGS(off) (V)
Case Temperature
2.5
1.0 VDS = 10 V Pulse Test Tc = 75C 0.1 25C 0.01 -25C 0.001
Drain Current ID (A)
2 ID = 10 mA 1.5 1 mA
0.1 mA 1 VDS = 10 V Pulse Test 0 25 50 75 100 125 150
0.0001 0
0.5
1
1.5
2
2.5
3
0.5 -25
Gate to Source Voltage VGS (V)
Case Temperature Tc (C)
Rev.4.00 Jun 15, 2006 page 3 of 6
RQK0603CGDQA
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Pulse Test Tc = 25C 1.2 ID = 1.5 A 1.0 A 0.8 0.5 A 0.2 A 0.4 0.1 A
Drain to Source Saturation Voltage VDS(on) (V)
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) ()
1.6
10 3 1.0 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 VGS = 4.5 V 10 V Pulse Test Tc = 25C
0 0
2
4
6
8
10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature
Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature
Drain to Source on State Resistance RDS(on) (m)
Drain to Source on State Resistance RDS(on) (m)
600 500 400 300 200 100 0 -25 Pulse Test VGS = 4.5 V ID = 1.5 A 1A
600 500 400 300 0.5 A 200 100 0 -25 0.2 A Pulse Test VGS = 10 V ID = 1.5 A 1A
0.5 A 0.2 A
0
25
50
75
100 125
150
0
25
50
75
100
125 150
Case Temperature Tc (C)
Case Temperature Tc (C)
Zero Gate Voltage Drain current vs. Case Temperature
1000
100 Pulse Test VDS = 10 V 10 -25C
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Pulse Test VGS = 0 V VDS = 60 V
100
1 Tc = 75C
25C
10
0.1 0.1
1
10
1 -25
0
25
50
75
100 125 150
Drain Current ID (A)
Case Temperature Tc (C)
Rev.4.00 Jun 15, 2006 page 4 of 6
RQK0603CGDQA
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
100 ID = 1.5 A Tc = 25C 80 VDD = 10 V 25 V 60 VDS 12 50 V VGS 8 VDD = 50 V 25 V 10 V 0 0.8 1.6 2.4 3.2 16 20 1000 VDD = 10 V VGS = 10 V Rg = 4.7 PW = 5 s Tc = 25C
Switching Characteristics
Switching Time t (ns)
100
tr tf
td(off)
40
10
td(on)
20
4 0 4.0
0
1 0.01
0.1
1
10
Gate Charge Qg (nC)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
1000 220
VGS = 0 V f = 1 MHz Ciss
Input Capacitance vs. Gate to Source Voltage
VDS = 0 V f = 1 MHz
Ciss, Coss, Crss (pF)
200
100
Ciss (pF)
60
180
Coss
10 160
Crss
1 0 10 20 30 40 50
140 -10
-5
0
5
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature
0.8 VGS = 0 0.7 0.6 ID = 10 mA 0.5 0.4 0.3 0.2 -25 1 mA
5
4 VGS = 10 V
Pulse Test Tc = 25C
3
2 5V 0 V, -5 V, -10 V 0
1
Body-Drain Diode Forward Voltage VSDF (V)
Reverse Drain Current vs. Source to Drain Voltage
Reverse Drain Current IDR (A)
0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100 125
150
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
Rev.4.00 Jun 15, 2006 page 5 of 6
RQK0603CGDQA
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g
D e
A
Q
c
E
HE
L A A xM S A b
L1 A3 e
LP
Reference Dimension in Millimeters Symbol Min Nom Max
A2
A
A1 S b b1 c b2 A-A Section
e1
c1
I1
Pattern of terminal position areas
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q
1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8
1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part Name RQK0603CGDQATL-E Quantity 3000 pcs. Shipping Container 178 mm reel, 8 mm Emboss taping
Rev.4.00 Jun 15, 2006 page 6 of 6
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